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File name: | stw30nm60nd_stp30nm60nd_stf30nm60nd_sti30nm60nd_stb30nm60nd.pdf [preview w30nm60nd p30nm60nd f30nm60nd i30nm60nd b30nm60nd] |
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Descr: | . Electronic Components Datasheets Active components Transistors ST stw30nm60nd_stp30nm60nd_stf30nm60nd_sti30nm60nd_stb30nm60nd.pdf |
Group: | Electronics > Components > Transistors |
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File name stw30nm60nd_stp30nm60nd_stf30nm60nd_sti30nm60nd_stb30nm60nd.pdf STx30NM60ND N-channel 600 V, 0.11 , 25 A FDmeshTM II Power MOSFET (with fast diode) TO-220, TO-220FP, D2PAK, I2PAK, TO-247 Features VDSS @TJ RDS(on) Type ID max max 2 3 3 STB30NM60ND 25 A I PAK 12 2 1 STI30NM60ND 25 A TO-247 STF30NM60ND 650 V 0.13 25 A(1) 3 STP30NM60ND 25 A 2 1 D PAK STW30NM60ND 25 A 1. Limited only by maximum temperature allowed 3 3 The world's best RDS(on) in TO-220 amongst TO-220 1 2 2 TO-220FP 1 the fast recovery diode devices 100% avalanche tested Low input capacitance and gate charge Figure 1. Internal schematic diagram Low gate input resistance Extremely high dv/dt and avalanche capabilities Application Switching applications Description The FDmeshTM II series belongs to the second generation of MDmeshTM technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout and associates all advantages of reduced on- resistance and fast switching with an intrinsic fast- It is therefore strongly recommended for bridge recovery body diode. topologies, in particular ZVS phase-shift converters. Table 1. Device summary Order codes Marking Package Packaging STB30NM60ND 30NM60ND |
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